T. Ogura, N. Ogura, M. Kirihara, Ki-Tae Park, Y. Baba, M. Sekine, K. Shimeno
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引用次数: 5
Abstract
By adding a shared bit diffusion contact to the twin MONOS, a high performance, low voltage, low power NOR-type memory can be achieved. The process is simple and the array maintains its dual density advantage, which makes this flash memory technology suitable for embedded as well as standalone applications. Two fast access embedded designs will be discussed: a) 16 Mb with 15 ns access time and b) 128 Kb with 4 ns access time.
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