Electromagnetic modelling of near-field plasmonic switches based on fractal nanoantennas

Y. Sharma, K. Dalal, A. Dhawan
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Abstract

We propose plasmonic switches based on nanoantennas with fractal features on top of vanadium dioxide (VO2) thin films. These plasmonic switches can be devised by utilizing various kinds of fractals like – the Sierpenski fractal or the Koch fractal. When exposed to heat, voltage, or infrared radiation, the VO2 thin film undergoes a phase transition from its insulator state to its metal state, thus leading to switching in the total optical behavior of the proposed switch. In this paper, the switching performance characteristics of the near-field plasmonic switches (NFPS) are numerically analyzed. As the iterations of the fractal features of the switch are increased, the electric-field intensity is enhanced during ON state of the NFPS and the electric-field intensity is reduced during OFF state of the NFPS. We also employ Finite Difference Time Domain (FDTD) analysis to numerically analyze the VO2 layer thickness effect on the performance of the NFPS. These plasmonic switches possess the potential to be used as elementary switching devices in computing networks and optical communication networks.
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基于分形纳米天线的近场等离子体开关电磁建模
我们在二氧化钒(VO2)薄膜上提出了基于分形特征纳米天线的等离子体开关。这些等离子开关可以通过利用各种分形来设计,比如Sierpenski分形或Koch分形。当暴露在热、电压或红外辐射下时,VO2薄膜经历了从绝缘体状态到金属状态的相变,从而导致所提出的开关的总光学行为的切换。本文对近场等离子体开关(NFPS)的开关性能进行了数值分析。随着开关分形特征迭代次数的增加,开关开启时的电场强度增大,开关关闭时的电场强度减小。我们还采用时域有限差分(FDTD)方法数值分析了VO2层厚度对NFPS性能的影响。这些等离子体开关具有在计算网络和光通信网络中用作基本开关器件的潜力。
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