{"title":"5 Model analysis for effects of spatial and energy profiles of plasma process-induced defects in Si substrate on MOS device performance","authors":"T. Hamano, K. Urabe, K. Eriguchi","doi":"10.23919/SISPAD49475.2020.9241621","DOIUrl":null,"url":null,"abstract":"This paper comprehensively discusses impacts of defect profiles in a Si substrate induced by plasma processing on MOS device performance. Both spatial and energy profiles of the defects considering practical plasma parameters were implemented into a conventional device simulation. Unique capacitance-voltage characteristics of MOS capacitors were obtained depending on the energy profiles, which shows good agreement with experimental results. The relationship between the defect profile and device parameter variation was clarified for n- and p-channel MOSFETs. The prediction results suggest the significance of precise control of spatial and energy profiles of defects for future MOS device design and fabrication.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/SISPAD49475.2020.9241621","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper comprehensively discusses impacts of defect profiles in a Si substrate induced by plasma processing on MOS device performance. Both spatial and energy profiles of the defects considering practical plasma parameters were implemented into a conventional device simulation. Unique capacitance-voltage characteristics of MOS capacitors were obtained depending on the energy profiles, which shows good agreement with experimental results. The relationship between the defect profile and device parameter variation was clarified for n- and p-channel MOSFETs. The prediction results suggest the significance of precise control of spatial and energy profiles of defects for future MOS device design and fabrication.
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