G. Ng, R. Lai, Y. Hwang, H. Wang, D. Lo, T. Block, K. Tan, D. Streit, R. Dia, A. Freudenthal, P. Chow, J. Berenz
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引用次数: 14
Abstract
A W-band 3-stage monolithic low noise amplifier has been developed based on InGaAs/InAlAs/InP HEMT MMIC technology. Both wafer passivation and stabilization bakes have been introduced for the first time to the MMIC process to make it more suitable for production. A minimum noise figure of 3.3 dB and 20 dB associated gain has been achieved at 94 GHz and represents the best reported performance to date for any passivated multi-stage MMIC LNA's operating at W-band.<>
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