{"title":"An evaluation of Si and SiGe base bipolar transistors for high frequency and high speed applications-basic transport and design","authors":"J. Hinckley, V. Sankaran, J. Singh, S. Tiwari","doi":"10.1109/CORNEL.1989.79829","DOIUrl":null,"url":null,"abstract":"Charge-carrier transport in pseudomorphically strained Si/sub 0.8/Ge/sub 0.2/ grown on","PeriodicalId":445524,"journal":{"name":"Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CORNEL.1989.79829","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Charge-carrier transport in pseudomorphically strained Si/sub 0.8/Ge/sub 0.2/ grown on
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