{"title":"A General Approach for Deformation Induced Stress on Flexible Electronics","authors":"Heetaek Lim, S. Kong, E. Guichard, A. Hoessinger","doi":"10.1109/SISPAD.2018.8551752","DOIUrl":null,"url":null,"abstract":"We present a simulation approach that is based on non-linear finite element method. This simulation flow allows to calculate large deformation field and associated stress and strain. The obtained simulation result agrees well with analytic solution. We extend this simulation method to evaluate the impacts of the deformation induced stress on device performance as well as structural integrity.","PeriodicalId":170070,"journal":{"name":"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"110 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2018.8551752","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
We present a simulation approach that is based on non-linear finite element method. This simulation flow allows to calculate large deformation field and associated stress and strain. The obtained simulation result agrees well with analytic solution. We extend this simulation method to evaluate the impacts of the deformation induced stress on device performance as well as structural integrity.
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