Z.H. Liu, S. Arulkumaran, G. Ng, W. Cheong, R. Zeng, J. Bu, H. Wang, K. Radhakrishnan, C.H. Tan
{"title":"Microwave noise characteristics of AlGaN/GaN HEMTs on high-resistivity silicon substrate","authors":"Z.H. Liu, S. Arulkumaran, G. Ng, W. Cheong, R. Zeng, J. Bu, H. Wang, K. Radhakrishnan, C.H. Tan","doi":"10.1109/RFIT.2005.1598891","DOIUrl":null,"url":null,"abstract":"AlGaN/GaN high-electron-mobility-transistors (HEMTs) with 0.8-/spl mu/m- and 0.3 /spl mu/m-gate-length were successfully fabricated on high-resistivity (HR) silicon substrate. The cutoff frequency f/sub T/ values of 7 GHz, 22 GHz and maximum oscillation frequency f/sub max/ values of 23 GHz, 40 GHz were achieved for 0.8-/spl mu/m- and 0.3-/spl mu/m-gate-length device, respectively. A minimum noise figure (NF/sub min/) of 2.0 dB and an associate gain (G/sub ass/) of 10.3 dB were achieved at 10 GHz in 0.3-/spl mu/m-gate-length device. This shows the promising potential of AlGaN/GaN HEMTs on high-resistivity Si for cost effective low noise amplifiers.","PeriodicalId":337918,"journal":{"name":"2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 IEEE International Wkshp on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Comm & Wireless Sensor Networks","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIT.2005.1598891","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
AlGaN/GaN high-electron-mobility-transistors (HEMTs) with 0.8-/spl mu/m- and 0.3 /spl mu/m-gate-length were successfully fabricated on high-resistivity (HR) silicon substrate. The cutoff frequency f/sub T/ values of 7 GHz, 22 GHz and maximum oscillation frequency f/sub max/ values of 23 GHz, 40 GHz were achieved for 0.8-/spl mu/m- and 0.3-/spl mu/m-gate-length device, respectively. A minimum noise figure (NF/sub min/) of 2.0 dB and an associate gain (G/sub ass/) of 10.3 dB were achieved at 10 GHz in 0.3-/spl mu/m-gate-length device. This shows the promising potential of AlGaN/GaN HEMTs on high-resistivity Si for cost effective low noise amplifiers.
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