Apoorva Singh, Digvijay Singh, Ram Prakash Singh, R. Ranjan, Praveen C Ramamurthy
{"title":"Photo-response and memory effect resemblance of Piezoceramics adapted in photovoltaic architecture","authors":"Apoorva Singh, Digvijay Singh, Ram Prakash Singh, R. Ranjan, Praveen C Ramamurthy","doi":"10.1109/ICEE56203.2022.10117711","DOIUrl":null,"url":null,"abstract":"Here the light responsivity of electrically poled ferroelectric piezoceramics with the composition (0.3) BiFe03- (0.7) Pb0.9sLa0.05 (Zr0.57Ti0.43)0.9875O3 (BFPTZT) through electrical current-voltage (IV) characterizations in dark and 1 Sun (AM 1.5 G) illumination were evaluated. Distinct current features (~ 10 nA) are observed from a thin solid pallet in the presence of light than dark, indicating light sensitivity. The material in the finely grained powdered form is introduced in the PEDOT: PSS, a hole transport layer of perovskite solar cell. Both poled, and unpoled samples resulted in different characteristics than the reference devices. The poled-BFPTZT- based device is found to be substantially perturbed with the light exposure and duration with the characteristics resembling memory effect, potentially arising due to the photoactivated domain alignments.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE International Conference on Emerging Electronics (ICEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEE56203.2022.10117711","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Here the light responsivity of electrically poled ferroelectric piezoceramics with the composition (0.3) BiFe03- (0.7) Pb0.9sLa0.05 (Zr0.57Ti0.43)0.9875O3 (BFPTZT) through electrical current-voltage (IV) characterizations in dark and 1 Sun (AM 1.5 G) illumination were evaluated. Distinct current features (~ 10 nA) are observed from a thin solid pallet in the presence of light than dark, indicating light sensitivity. The material in the finely grained powdered form is introduced in the PEDOT: PSS, a hole transport layer of perovskite solar cell. Both poled, and unpoled samples resulted in different characteristics than the reference devices. The poled-BFPTZT- based device is found to be substantially perturbed with the light exposure and duration with the characteristics resembling memory effect, potentially arising due to the photoactivated domain alignments.