J. Ondrusek, A. Nishimura, H. Hoang, T. Sugiura, R. Blumenthal, H. Kitagawa, J. McPherson
{"title":"Effective kinetic variations with stress duration for multilayered metallizations","authors":"J. Ondrusek, A. Nishimura, H. Hoang, T. Sugiura, R. Blumenthal, H. Kitagawa, J. McPherson","doi":"10.1109/RELPHY.1988.23447","DOIUrl":null,"url":null,"abstract":"Electromigration (EM) in Ti:W/Al-1%Si two-layered and Ti/W/Al-1%Si three-layered metallizations was investigated. The activation energy and the EM performance were studied as functions of the change in resistance which results from EM damage. The effective activation energy was found to decrease monotonically with increasing test structure resistance under stress. The temperature coefficient of resistance supports a void formation model in the Al-Si layer as the resistance rise mechanism for the Ti:W/Al-Si multilayered film. An empirical form of the Black equation which incorporates resistance rise is proposed.<<ETX>>","PeriodicalId":102187,"journal":{"name":"26th Annual Proceedings Reliability Physics Symposium 1988","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"20","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"26th Annual Proceedings Reliability Physics Symposium 1988","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RELPHY.1988.23447","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 20
Abstract
Electromigration (EM) in Ti:W/Al-1%Si two-layered and Ti/W/Al-1%Si three-layered metallizations was investigated. The activation energy and the EM performance were studied as functions of the change in resistance which results from EM damage. The effective activation energy was found to decrease monotonically with increasing test structure resistance under stress. The temperature coefficient of resistance supports a void formation model in the Al-Si layer as the resistance rise mechanism for the Ti:W/Al-Si multilayered film. An empirical form of the Black equation which incorporates resistance rise is proposed.<>
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