Pub Date : 1988-04-12DOI: 10.1109/RELPHY.1988.23427
H. Koyama, H. Shiozaki, I. Okumura, S. Mizugashira, H. Higuchi, T. Ajiki
A new failure wire crater was studied in surface mount devices. It is defined as a peeling-off phenomenon of the wire ball from the Si substrate or insulator when soldering heat stress is present. It only occurs when the package absorbs a significant amount of water before soldering. To analyze this phenomenon, conditions of water absorption, soldering heat stress, wafer process (metallization and insulator materials) and assembly process (wire bonding) were investigated. From these results, it is found that cratering occurs when the Si nodules of Al-Si metallization damage the insulator at wire bonding.<>
{"title":"A new bond failure wire crater in surface mount device","authors":"H. Koyama, H. Shiozaki, I. Okumura, S. Mizugashira, H. Higuchi, T. Ajiki","doi":"10.1109/RELPHY.1988.23427","DOIUrl":"https://doi.org/10.1109/RELPHY.1988.23427","url":null,"abstract":"A new failure wire crater was studied in surface mount devices. It is defined as a peeling-off phenomenon of the wire ball from the Si substrate or insulator when soldering heat stress is present. It only occurs when the package absorbs a significant amount of water before soldering. To analyze this phenomenon, conditions of water absorption, soldering heat stress, wafer process (metallization and insulator materials) and assembly process (wire bonding) were investigated. From these results, it is found that cratering occurs when the Si nodules of Al-Si metallization damage the insulator at wire bonding.<<ETX>>","PeriodicalId":102187,"journal":{"name":"26th Annual Proceedings Reliability Physics Symposium 1988","volume":"363 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122844896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-04-12DOI: 10.1109/RELPHY.1988.23438
S.-C. Lim, E. Tan
Electrical-overstress/electrostatic-discharge-induced latch-up failures have been observed on both MOS field and simulated failures. Using emission microscopy, this failure mode is determined to be due to junction spikings which form a p/sup +/ doped junction, creating a parasitic p.n.p.n. structure and inducing a localized SCR latch-up. A model for this failure mode is presented. The emission microscope readily locates the exact contact at which junction spiking occurs even in complex VLSI devices. Its characteristic emission pattern allows the failure mechanism to be determined without further destructive physical analysis. It provides a visual proof that current crowding occurs around the contacts during high-current events.<>
{"title":"Detection of junction spiking and its induced latch-up by emission microscopy","authors":"S.-C. Lim, E. Tan","doi":"10.1109/RELPHY.1988.23438","DOIUrl":"https://doi.org/10.1109/RELPHY.1988.23438","url":null,"abstract":"Electrical-overstress/electrostatic-discharge-induced latch-up failures have been observed on both MOS field and simulated failures. Using emission microscopy, this failure mode is determined to be due to junction spikings which form a p/sup +/ doped junction, creating a parasitic p.n.p.n. structure and inducing a localized SCR latch-up. A model for this failure mode is presented. The emission microscope readily locates the exact contact at which junction spiking occurs even in complex VLSI devices. Its characteristic emission pattern allows the failure mechanism to be determined without further destructive physical analysis. It provides a visual proof that current crowding occurs around the contacts during high-current events.<<ETX>>","PeriodicalId":102187,"journal":{"name":"26th Annual Proceedings Reliability Physics Symposium 1988","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130709339","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-04-12DOI: 10.1109/RELPHY.1988.23446
H. Hoang
The electromigration (EM) performance for the Ti:W/Al-1%Si two-layer and the Ti/W/Al-1%Si three-layer metallizations annealed at elevated temperatures was investigated. The formation of the Al/sub 12/W intermetallic compound, which transforms to Al/sub 5/W as the annealing temperature increases, was observed at the Al-alloy/refractory-metal interface. An increase in activation energy and sheet resistance was observed for both the two-layer and three-layer systems for annealing above 450 degrees C and 500 degrees C, respectively. The operating lifetimes of the conductors, for 1% failures, were projected to 80 degrees C and 2*10/sup 5/ A/cm/sup 2/. The three-layer system shows a 2* increase in lifetime, relative to the other system, for the standard 30-min, 450 degrees C anneal and an enhancement in film integrity at higher annealing temperatures, near 550 degrees C. However, the two-layer system shows a 2* increase in lifetime near 475 degrees C, due to an increase in activation energy for a lower temperature anneal.<>
{"title":"Effects of annealing temperature on electromigration performance of multilayer metallization systems","authors":"H. Hoang","doi":"10.1109/RELPHY.1988.23446","DOIUrl":"https://doi.org/10.1109/RELPHY.1988.23446","url":null,"abstract":"The electromigration (EM) performance for the Ti:W/Al-1%Si two-layer and the Ti/W/Al-1%Si three-layer metallizations annealed at elevated temperatures was investigated. The formation of the Al/sub 12/W intermetallic compound, which transforms to Al/sub 5/W as the annealing temperature increases, was observed at the Al-alloy/refractory-metal interface. An increase in activation energy and sheet resistance was observed for both the two-layer and three-layer systems for annealing above 450 degrees C and 500 degrees C, respectively. The operating lifetimes of the conductors, for 1% failures, were projected to 80 degrees C and 2*10/sup 5/ A/cm/sup 2/. The three-layer system shows a 2* increase in lifetime, relative to the other system, for the standard 30-min, 450 degrees C anneal and an enhancement in film integrity at higher annealing temperatures, near 550 degrees C. However, the two-layer system shows a 2* increase in lifetime near 475 degrees C, due to an increase in activation energy for a lower temperature anneal.<<ETX>>","PeriodicalId":102187,"journal":{"name":"26th Annual Proceedings Reliability Physics Symposium 1988","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124137849","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-04-12DOI: 10.1109/RELPHY.1988.23432
Makoto Kitano, A. Nishimura, S. Kawai, K. Nishi
Package cracking that occurs in surface-mount devices that have absorbed moisture has been studied by means of a moisture-diffusion analysis of the plastic, deformation and stress analysis of the package, and measurement of some high-temperature properties of the plastic. The validity of the analysis has been confirmed by a measurement of the deformation of packages heated by infrared radiation. Several packages with different level of moisture saturation and hysteresis of moisture absorption have been heated by soldering and the occurrence of package cracking investigated. The vapor pressure and distribution of moisture content of these packages have been calculated by the present analysis. It was found that generated vapor pressure is lower than saturated vapor pressure and depends on the moisture content at the part of the plastic facing the space in which vapor pressure is generated. This example shows that it is possible to evaluate package cracking by the present analysis method quantitatively.<>
{"title":"Analysis of package cracking during reflow soldering process","authors":"Makoto Kitano, A. Nishimura, S. Kawai, K. Nishi","doi":"10.1109/RELPHY.1988.23432","DOIUrl":"https://doi.org/10.1109/RELPHY.1988.23432","url":null,"abstract":"Package cracking that occurs in surface-mount devices that have absorbed moisture has been studied by means of a moisture-diffusion analysis of the plastic, deformation and stress analysis of the package, and measurement of some high-temperature properties of the plastic. The validity of the analysis has been confirmed by a measurement of the deformation of packages heated by infrared radiation. Several packages with different level of moisture saturation and hysteresis of moisture absorption have been heated by soldering and the occurrence of package cracking investigated. The vapor pressure and distribution of moisture content of these packages have been calculated by the present analysis. It was found that generated vapor pressure is lower than saturated vapor pressure and depends on the moisture content at the part of the plastic facing the space in which vapor pressure is generated. This example shows that it is possible to evaluate package cracking by the present analysis method quantitatively.<<ETX>>","PeriodicalId":102187,"journal":{"name":"26th Annual Proceedings Reliability Physics Symposium 1988","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128666925","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-04-12DOI: 10.1109/RELPHY.1988.23453
J. Lloyd, M. Shatzkes, D. Challener
The electromigration lifetime of Cr/Al-Cu conductors covered with polyimide passivation was studied as a function of temperature and current density. The activation energy for failure was found to be substantially higher than that found in studies of similar metals without polyimide. A current exponent of 2 was determined in the absence of temperature gradient failure. An improved method for calculating the activation energy for temperature gradient failure is described. The problem of the apparent stress-dependent activation energies is discussed.<>
{"title":"Kinetic study of electromigration failure in Cr/Al-Cu thin film conductors covered with polyimide and the problem of the stress dependent activation energy","authors":"J. Lloyd, M. Shatzkes, D. Challener","doi":"10.1109/RELPHY.1988.23453","DOIUrl":"https://doi.org/10.1109/RELPHY.1988.23453","url":null,"abstract":"The electromigration lifetime of Cr/Al-Cu conductors covered with polyimide passivation was studied as a function of temperature and current density. The activation energy for failure was found to be substantially higher than that found in studies of similar metals without polyimide. A current exponent of 2 was determined in the absence of temperature gradient failure. An improved method for calculating the activation energy for temperature gradient failure is described. The problem of the apparent stress-dependent activation energies is discussed.<<ETX>>","PeriodicalId":102187,"journal":{"name":"26th Annual Proceedings Reliability Physics Symposium 1988","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124677373","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-04-12DOI: 10.1109/RELPHY.1988.23451
J. Cottle, T.M. Chen, K. Rodbell
Experiments designed to compare conventional median-time-to-failure (MTF) data with those obtained through the use of noise measurements are reported. Comparisons are made of aluminum and aluminum-copper alloy films from identical wafers fabricated with varying electromigration-sensitive parameters. The preliminary data indicate that noise measurements might be able to provide a quick, nondestructive, and sensitive method for characterizing thin film metallizations used as interconnects in integrated circuits. Furthermore, noise measurements offer the opportunity to characterize fully the kinetics of electromigration, once the source of the noise is well understood.<>
{"title":"A comparison between noise measurements and conventional electromigration reliability testing","authors":"J. Cottle, T.M. Chen, K. Rodbell","doi":"10.1109/RELPHY.1988.23451","DOIUrl":"https://doi.org/10.1109/RELPHY.1988.23451","url":null,"abstract":"Experiments designed to compare conventional median-time-to-failure (MTF) data with those obtained through the use of noise measurements are reported. Comparisons are made of aluminum and aluminum-copper alloy films from identical wafers fabricated with varying electromigration-sensitive parameters. The preliminary data indicate that noise measurements might be able to provide a quick, nondestructive, and sensitive method for characterizing thin film metallizations used as interconnects in integrated circuits. Furthermore, noise measurements offer the opportunity to characterize fully the kinetics of electromigration, once the source of the noise is well understood.<<ETX>>","PeriodicalId":102187,"journal":{"name":"26th Annual Proceedings Reliability Physics Symposium 1988","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125221758","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-04-12DOI: 10.1109/RELPHY.1988.23416
I. Chen, J. Choi, T. Chan, T. Ong, C. Hu
The correlation between channel hot carrier stressing and gate oxide integrity is studied. It is found that channel hot carriers have no detectable effect on gate oxide integrity even when other parameters (e.g., Delta V/sub T/ and Delta VI/sub D/) have become intolerably degraded. In the extreme cases of stressing at V/sub G/ approximately=V/sub T/ with measurable hole injection current, however, the oxide charge-to-breakdown decreases linearly with the amount of hole fluence injected during the channel hot hole stressing. This may limit the endurance of a nonvolatile memory using hot holes for erasing. This can also explain the gate-to-drain breakdown of a device biased in the snap-back region, since snap-back at low gate voltage is favorable for hole injection. Snap-back-induced oxide breakdown could be an electrostatic-discharge failure mechanism.<>
{"title":"The effect of channel hot carrier stressing on gate oxide integrity in MOSFET","authors":"I. Chen, J. Choi, T. Chan, T. Ong, C. Hu","doi":"10.1109/RELPHY.1988.23416","DOIUrl":"https://doi.org/10.1109/RELPHY.1988.23416","url":null,"abstract":"The correlation between channel hot carrier stressing and gate oxide integrity is studied. It is found that channel hot carriers have no detectable effect on gate oxide integrity even when other parameters (e.g., Delta V/sub T/ and Delta VI/sub D/) have become intolerably degraded. In the extreme cases of stressing at V/sub G/ approximately=V/sub T/ with measurable hole injection current, however, the oxide charge-to-breakdown decreases linearly with the amount of hole fluence injected during the channel hot hole stressing. This may limit the endurance of a nonvolatile memory using hot holes for erasing. This can also explain the gate-to-drain breakdown of a device biased in the snap-back region, since snap-back at low gate voltage is favorable for hole injection. Snap-back-induced oxide breakdown could be an electrostatic-discharge failure mechanism.<<ETX>>","PeriodicalId":102187,"journal":{"name":"26th Annual Proceedings Reliability Physics Symposium 1988","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130148350","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-04-12DOI: 10.1109/RELPHY.1988.23417
R. Bellens, P. Heremans, G. Groeseneken, H. Maes
A new procedure is proposed for a reliable lifetime prediction of MOS-transistors under hot-carrier stressing. This procedure is based on the measurement of the charge pumping current increase during the degradation. Unlike procedures based on threshold voltage (or transconductance) shifts, the new method is shown to be a better monitor for the hot-carrier degradation and is applicable for a wider range of stress conditions. It is also demonstrated that the procedure provides a more reliable lifetime prediction, especially under alternating stress conditions or under low-frequency dynamic stress conditions.<>
{"title":"A new procedure for lifetime prediction of n-channel MOS-transistors using the charge pumping technique","authors":"R. Bellens, P. Heremans, G. Groeseneken, H. Maes","doi":"10.1109/RELPHY.1988.23417","DOIUrl":"https://doi.org/10.1109/RELPHY.1988.23417","url":null,"abstract":"A new procedure is proposed for a reliable lifetime prediction of MOS-transistors under hot-carrier stressing. This procedure is based on the measurement of the charge pumping current increase during the degradation. Unlike procedures based on threshold voltage (or transconductance) shifts, the new method is shown to be a better monitor for the hot-carrier degradation and is applicable for a wider range of stress conditions. It is also demonstrated that the procedure provides a more reliable lifetime prediction, especially under alternating stress conditions or under low-frequency dynamic stress conditions.<<ETX>>","PeriodicalId":102187,"journal":{"name":"26th Annual Proceedings Reliability Physics Symposium 1988","volume":"52 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128872716","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-04-12DOI: 10.1109/RELPHY.1988.23442
Y. Wang, Y. Nishioka, T. Ma, R. Barker
The effects of 1,1,1,-trichloroethane (TCA) in the silicon thermal oxidation environment on the hardness of the resulting SiO/sub 2//Si structures to damages caused by ionizing radiation and hot electron injection have been investigated. Using small amounts of TCA during the initial stage of oxidation, it is possible to improve the hardness of the interface. When excess amounts of TCA are used, however, the hardness degrades. In the range typically used in industry, the hardness goes down monotonically with increasing amount of TCA. The use of TCA also causes a significant change in the gate-size dependence of the radiation or hot electron induced interface traps. This dependence is almost completely suppressed in devices where maximum hardness of the oxide is achieved by optimizing the amount of TCA. These results are examined in terms of the effects of Cl on the interfacial strain near the SiO/sub 2//Si transition region.<>
{"title":"Radiation and hot-electron hardness of SiO/sub 2//Si grown in O/sub 2/ with trichloroethane additive","authors":"Y. Wang, Y. Nishioka, T. Ma, R. Barker","doi":"10.1109/RELPHY.1988.23442","DOIUrl":"https://doi.org/10.1109/RELPHY.1988.23442","url":null,"abstract":"The effects of 1,1,1,-trichloroethane (TCA) in the silicon thermal oxidation environment on the hardness of the resulting SiO/sub 2//Si structures to damages caused by ionizing radiation and hot electron injection have been investigated. Using small amounts of TCA during the initial stage of oxidation, it is possible to improve the hardness of the interface. When excess amounts of TCA are used, however, the hardness degrades. In the range typically used in industry, the hardness goes down monotonically with increasing amount of TCA. The use of TCA also causes a significant change in the gate-size dependence of the radiation or hot electron induced interface traps. This dependence is almost completely suppressed in devices where maximum hardness of the oxide is achieved by optimizing the amount of TCA. These results are examined in terms of the effects of Cl on the interfacial strain near the SiO/sub 2//Si transition region.<<ETX>>","PeriodicalId":102187,"journal":{"name":"26th Annual Proceedings Reliability Physics Symposium 1988","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122455967","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-04-12DOI: 10.1109/RELPHY.1988.23456
H. Hieber
An attempt is made to show the partially reversible flow mechanics of soft-soldered contacts. It is pointed out that the localization of irreversible strain makes a prediction of failure during thermomechanical fatigue tests difficult. Viscoelastic flow of SnPb/sub 40/ solder is discussed, along with the microstructure of soft-soldered contacts.<>
{"title":"Fatigue of soft-soldered contacts at surface-mounted devices","authors":"H. Hieber","doi":"10.1109/RELPHY.1988.23456","DOIUrl":"https://doi.org/10.1109/RELPHY.1988.23456","url":null,"abstract":"An attempt is made to show the partially reversible flow mechanics of soft-soldered contacts. It is pointed out that the localization of irreversible strain makes a prediction of failure during thermomechanical fatigue tests difficult. Viscoelastic flow of SnPb/sub 40/ solder is discussed, along with the microstructure of soft-soldered contacts.<<ETX>>","PeriodicalId":102187,"journal":{"name":"26th Annual Proceedings Reliability Physics Symposium 1988","volume":"112 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130738914","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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