Equivalent Thermal Conductivity Modeling of Through-Silicon Via (TSV) Structures

Abstract

A novel approach for modeling through-silicon-via (TSV) structure with equivalent thermal conductivity is proposed in this paper. The basic principle of this method is to replace the original copper via surrounded with silicon-dioxide material by a square column with equivalent thermal conductivity. Based on the curve fitting technique, the empirical formulas for the anisotropic equivalent thermal conductivity are obtained. With the proposed model, the computational resources can be reduced significantly for simulating complicated 3-D structures with arbitrary distributed TSVs. The validity and efficiency of the proposed method are illustrated by the numerical examples.