Synchronization of pulsed and continuous-wave IMPATT oscillators in the millimeter wavelength range. Part 1. Generator designs and a generalized model of their external signal synchronization

N. Karushkin
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Abstract

Advances in the development of ultrahigh-frequency semiconductor electronics open wide opportunities for developing optimal schemes and designs of microwave power sources in the millimeter wavelength range providing high stability of the frequency and electromagnetic oscillation phase. Synchronized diode generators used in transmit/receive module for active phased array antennas, coherent low-power radar stations, etc. show great promise. The mode of external synchronization of semiconductor generators allows effectively implementing the task of creating output stages of the transmitters with high gain factor, low frequency noise and an output power level corresponding to the maximum power mode. This article presents the first of two parts of the study, which summarizes the results achieved so far in the development of synchronized oscillators based on impact ionization avalanche transit-time (IMPATT) diodes. The first part presents the electrodynamic designs of the oscillators, which are synchronized with an external source of microwave oscillations and contain a resonant oscillating system with a silicon IMPATT diode. The silicon two-drift IMPATT diode was chosen as an active element due to the fact that its use allows reaching significant levels of pulsed microwave power – an order of magnitude higher than those of the most well-known HEMT and pHEMT transistors in the millimeter wavelength range. It is shown that to reduce losses, the oscillating system should be made in the form of a radial resonator with a diode casing, which has distributed parameters. This eliminates the use of additional reactive inhomogeneities in the initial cross-section of the waveguide section of the generator. Due to the low quality factor of the resonant casing of the diode, the generalized quality factor of the microwave circuit takes the minimum value required to implement a stable generator synchronization process in the millimeter wavelength range. The second part of the work will be devoted to synchronized pulse generators with an output power of 20–150 W.
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毫米波范围内脉冲和连续波IMPATT振荡器的同步。第1部分。发生器的设计及其外部信号同步的广义模型
超高频半导体电子学的发展为开发毫米波范围内的微波功率源的优化方案和设计提供了广泛的机会,提供了高频率和电磁振荡相位的稳定性。同步二极管发生器应用于有源相控阵天线、相干低功率雷达站等发射/接收模块,前景广阔。半导体发生器的外部同步模式允许有效地实现创建具有高增益因数、低频噪声和与最大功率模式相对应的输出功率电平的发射机输出级的任务。本文介绍了两部分研究的第一部分,总结了迄今为止基于冲击电离雪崩传递时间(IMPATT)二极管的同步振荡器的研究成果。第一部分介绍了振荡器的电动力学设计,该振荡器与外部微波振荡源同步,包含一个带有硅IMPATT二极管的谐振振荡系统。硅双漂移IMPATT二极管被选为有源元件,因为它的使用可以达到脉冲微波功率的显着水平,比最著名的HEMT和pHEMT晶体管在毫米波长范围内的功率高一个数量级。结果表明,为了减小损耗,振荡系统应采用具有分布参数的二极管外壳的径向谐振腔的形式。这消除了在发生器波导截面的初始截面中使用额外的反应性不均匀性。由于二极管谐振腔的质量因数较低,微波电路的广义质量因数取在毫米波波长范围内实现稳定的发生器同步过程所需的最小值。第二部分的工作将致力于同步脉冲发生器输出功率为20 - 150w。
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