{"title":"Heterogeneous integration of SiGe/Ge and III–V on Si for CMOS photonics","authors":"M. Takenaka, S. Takagi","doi":"10.1109/IMFEDK.2016.7521663","DOIUrl":null,"url":null,"abstract":"We have investigated CMOS photonics based on heterogeneous integration of SiGe/Ge and III-V semiconductors on Si, which gives us opportunities to enhance functionalities of Si photonics through their superior material properties for electronic-photonics integrated circuits.","PeriodicalId":293371,"journal":{"name":"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMFEDK.2016.7521663","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
We have investigated CMOS photonics based on heterogeneous integration of SiGe/Ge and III-V semiconductors on Si, which gives us opportunities to enhance functionalities of Si photonics through their superior material properties for electronic-photonics integrated circuits.
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