Improved surface impedance absorbing boundary for FDTD method

Y. Mao, T. Jiang, A. Elsherbeni
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引用次数: 3

Abstract

An improved absorbing boundary condition for terminating finite-difference time-domain (FDTD) simulations, based on the surface impedance concept, is proposed in this paper. The improved method uses E component collocation instead of the H component collocation as in [1]. The performance of the two SIABCs and 10-layers CPML are discussed with a 3D example which employed these absorbing boundary conditions (ABCs) in the calculation of RCS of a dielectric sphere. The computer resources requirements are also discussed. The compared result indicates that both the SIABCs have a comparable absorbing performance with 10-layers CPML, and the E component collocated SIABC has a better absorbing performance relative to H component collocated SIABC.
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FDTD法表面阻抗吸收边界的改进
基于表面阻抗的概念,提出了一种改进的时域有限差分(FDTD)模拟结束吸收边界条件。改进后的方法采用E分量搭配代替[1]中的H分量搭配。讨论了两种吸收边界条件和10层CPML的性能,并通过一个三维算例讨论了这两种吸收边界条件在介质球RCS计算中的应用。讨论了计算机资源需求。结果表明,两种SIABC的吸波性能均与10层CPML相当,且E组分共配SIABC的吸波性能优于H组分共配SIABC。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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