M. Mohamad, F. Mustafa, M. Abidin, S. Rahman, N. K. Al-Obaidi, A. M. Hashim, A. Aziz, M. Hashim
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引用次数: 11
Abstract
The response of Pt-circular Schottky diodes fabricated on undoped AlGaN/GaN high-electron-mobility-transistor (HEMT) structure to hydrogen gas at various temperatures, ranging from 25°C to 200°C has been investigated. A 5 nm-thick of catalytic Pt Shottky contact is formed by electron beam evaporation. Both forward and reverse currents of the device increase upon exposing to hydrogen gas. Although a slight change of forward and reverse current is obtained at room temperature upon exposure to hydrogen but both currents drastically increase with the increase of temperatures. The time-transient characteristics show the average current increment and decrement speed of 27.6 nA/sec and 17.6 nA/sec, respectively at constant forward bias of 1V and temperature of 200°C.
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