Prediction of Characteristics of Future Scaled 3D NAND Flash Memory by Using TCAD and SPICE

Abstract

In this work, we predicted the characteristics of 3D NAND Flash for lateral and vertical scaling by using simulation tools such as TCAD and SPICE. We fitted our SPICE models to TCAD results, and then we developed a model which predicts the on-current $(\mathrm{I}_{on})$, threshold voltage $(\mathrm{V}_{mathrm{th}})$, and subthreshold swing (S.S.) with according to lateral scaling. We also analyzed the program efficiency with scaling the thickness of tunneling oxide by using SPICE. Finally, we predicted Ion with increasing number of word-line layers.