Analytical Capacitance Model for In-Ga-Zn-O Thin-Film Transistors Including Degeneration

Abstract

In this paper, a capacitance model of amorphous In-Zn-Ga-O thin-film transistors is proposed based on terms of surface potential. The carrier degeneracy is considered due to the device characteristics. Based on the symmetric quadrature version of Charge-Sheet Model, a new expression of terminal charge is provided. Therefore, the capacitance model can be obtained. The validity of the model is verified by comparisons with measured data and simulation results. It is very useful to circuit simulators.