Pub Date : 1900-01-01DOI: 10.1109/INEC.2018.8441926
Sen Ren, Jianbing Xie, Q. Shen, Fei Wang, W. Yuan, Jinkuang Zhang
An improved atmospheric packaged SOI resonant pressure sensor is presented. A special anchor structure using suspended connecting truss is developed to suppress the vertical position shift of the resonator when the diaphragm deflects, and a stress isolating structure is introduced to improve the performance of the resonant pressure sensor. Experimental results show that the vertical position shift of the resonator is reduced to only 7.3% compared with conventional anchor design. Over the full scale pressure range of 3.5–280 kPa, the pressure sensitivity is 10.86 Hz/kPa, with the nonlinearity is 0.0138%FS, the hysteresis error is 0.0047%FS, the repeatability error is 0.0071%FS, and the accuracy is better than 0.02%FS.
{"title":"An Improved SOI Resonant Pressure Sensor using Atmospheric Packaging*","authors":"Sen Ren, Jianbing Xie, Q. Shen, Fei Wang, W. Yuan, Jinkuang Zhang","doi":"10.1109/INEC.2018.8441926","DOIUrl":"https://doi.org/10.1109/INEC.2018.8441926","url":null,"abstract":"An improved atmospheric packaged SOI resonant pressure sensor is presented. A special anchor structure using suspended connecting truss is developed to suppress the vertical position shift of the resonator when the diaphragm deflects, and a stress isolating structure is introduced to improve the performance of the resonant pressure sensor. Experimental results show that the vertical position shift of the resonator is reduced to only 7.3% compared with conventional anchor design. Over the full scale pressure range of 3.5–280 kPa, the pressure sensitivity is 10.86 Hz/kPa, with the nonlinearity is 0.0138%FS, the hysteresis error is 0.0047%FS, the repeatability error is 0.0071%FS, and the accuracy is better than 0.02%FS.","PeriodicalId":310101,"journal":{"name":"2018 IEEE 8th International Nanoelectronics Conferences (INEC)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124569048","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/INEC.2018.8441913
C. Iliescu, G. Tresset, M. Ni, Ctlin Mrculescu
The current work presents the using of microfluidic hydrodynamic flow focusing for enabling an accurate control of self-assembling nanoparticles. A mixture of surfactant and DNA dispersed in 35% ethanol is focused between two streams of pure water in a microfluidic channel. As a result, a rapid change of solvent quality takes place in the central stream, and the surfactant-bound DNA molecules undergo a fast coil-globule transition. Using this method nanoparticles having a hydrodynamic diameter of 70nm with a polydispersity index below 0.2 were achieved. A second method relied on the controlled diffusive mixing of surfactant and DNA solutions through a water stream of tunable width. Using this method the smallest nanoparticles achieved were about 30 nm in hydrodynamic diameter, meaning that most of them contained a single DNA molecule.
{"title":"Strategies in Microfluidic Self-Assembled Nanoparticles","authors":"C. Iliescu, G. Tresset, M. Ni, Ctlin Mrculescu","doi":"10.1109/INEC.2018.8441913","DOIUrl":"https://doi.org/10.1109/INEC.2018.8441913","url":null,"abstract":"The current work presents the using of microfluidic hydrodynamic flow focusing for enabling an accurate control of self-assembling nanoparticles. A mixture of surfactant and DNA dispersed in 35% ethanol is focused between two streams of pure water in a microfluidic channel. As a result, a rapid change of solvent quality takes place in the central stream, and the surfactant-bound DNA molecules undergo a fast coil-globule transition. Using this method nanoparticles having a hydrodynamic diameter of 70nm with a polydispersity index below 0.2 were achieved. A second method relied on the controlled diffusive mixing of surfactant and DNA solutions through a water stream of tunable width. Using this method the smallest nanoparticles achieved were about 30 nm in hydrodynamic diameter, meaning that most of them contained a single DNA molecule.","PeriodicalId":310101,"journal":{"name":"2018 IEEE 8th International Nanoelectronics Conferences (INEC)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116002092","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/INEC.2018.8441909
T. Thepudom, T. Kerdcharoen
Organic thin film gas sensor based on Zinc hexadecafluorophthalocyanine (ZnPcF16) have been fabricated by spin-coating method. The thin film was then used to study the absorption spectra and morphology using UV-VIS spectrometer. Then the fabricated film has been used as a chemical sensing material for the detection of VOCs (ammonia, acetone, ethanol and methanol) by using a low-cost optical measurement. For getting more insight, Quantum mechanical calculation based on DFT was employed to investigate the interactions between VOCs and sensing molecules.
{"title":"Effect of Fluorine Circumference of Zinc-hexadecafluorophthalocyanine towards VOCs determination by Using Low-Cost Optical Electronic Nose","authors":"T. Thepudom, T. Kerdcharoen","doi":"10.1109/INEC.2018.8441909","DOIUrl":"https://doi.org/10.1109/INEC.2018.8441909","url":null,"abstract":"Organic thin film gas sensor based on Zinc hexadecafluorophthalocyanine (ZnPcF16) have been fabricated by spin-coating method. The thin film was then used to study the absorption spectra and morphology using UV-VIS spectrometer. Then the fabricated film has been used as a chemical sensing material for the detection of VOCs (ammonia, acetone, ethanol and methanol) by using a low-cost optical measurement. For getting more insight, Quantum mechanical calculation based on DFT was employed to investigate the interactions between VOCs and sensing molecules.","PeriodicalId":310101,"journal":{"name":"2018 IEEE 8th International Nanoelectronics Conferences (INEC)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129411515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/INEC.2018.8441914
S. Ong, E. Tok
The effect of surface passivation on tin distribution in Ge1-xSnx(001)/Ge(001) are studied using first principles calculations. The segregation of Sn atoms towards the surface were suppressed when the clean surface is fully passivated with hydrogen adatoms while changing the passivating species to halogen adatoms resulted in enhancing Sn segregation towards the surface. This effect strengthens when moving down the Group-VII elements from fluorine to iodine. For both hydrogenated and halogenated surfaces, aggregation of sn atoms is not favored.
{"title":"Distribution of Sn in Strained Ge1-xSnx (001): The Effect of Surface Passivation","authors":"S. Ong, E. Tok","doi":"10.1109/INEC.2018.8441914","DOIUrl":"https://doi.org/10.1109/INEC.2018.8441914","url":null,"abstract":"The effect of surface passivation on tin distribution in Ge1-xSnx(001)/Ge(001) are studied using first principles calculations. The segregation of Sn atoms towards the surface were suppressed when the clean surface is fully passivated with hydrogen adatoms while changing the passivating species to halogen adatoms resulted in enhancing Sn segregation towards the surface. This effect strengthens when moving down the Group-VII elements from fluorine to iodine. For both hydrogenated and halogenated surfaces, aggregation of sn atoms is not favored.","PeriodicalId":310101,"journal":{"name":"2018 IEEE 8th International Nanoelectronics Conferences (INEC)","volume":"100 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126199045","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/INEC.2018.8441924
Feng Zhuang, J. Fang, W. Deng, Xiaoyu Ma, Junkai Huang
In this paper, a capacitance model of amorphous In-Zn-Ga-O thin-film transistors is proposed based on terms of surface potential. The carrier degeneracy is considered due to the device characteristics. Based on the symmetric quadrature version of Charge-Sheet Model, a new expression of terminal charge is provided. Therefore, the capacitance model can be obtained. The validity of the model is verified by comparisons with measured data and simulation results. It is very useful to circuit simulators.
本文提出了基于表面电位的非晶In- zn - ga - o薄膜晶体管的电容模型。由于器件特性，考虑了载波简并。基于电荷表模型的对称正交版本，给出了一种新的终端电荷表达式。因此，可以得到电容模型。通过与实测数据和仿真结果的比较，验证了模型的有效性。它对电路模拟器非常有用。
{"title":"Analytical Capacitance Model for In-Ga-Zn-O Thin-Film Transistors Including Degeneration","authors":"Feng Zhuang, J. Fang, W. Deng, Xiaoyu Ma, Junkai Huang","doi":"10.1109/INEC.2018.8441924","DOIUrl":"https://doi.org/10.1109/INEC.2018.8441924","url":null,"abstract":"In this paper, a capacitance model of amorphous In-Zn-Ga-O thin-film transistors is proposed based on terms of surface potential. The carrier degeneracy is considered due to the device characteristics. Based on the symmetric quadrature version of Charge-Sheet Model, a new expression of terminal charge is provided. Therefore, the capacitance model can be obtained. The validity of the model is verified by comparisons with measured data and simulation results. It is very useful to circuit simulators.","PeriodicalId":310101,"journal":{"name":"2018 IEEE 8th International Nanoelectronics Conferences (INEC)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123828330","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/INEC.2018.8441917
Mauro Giorcelli, P. Savi, A. Tagliaferro
Carbon is playing an increasingly prominent role as a sensing material. The various steps that transform a raw material in a sensing device are briefly presented and discussed. The discussion then deals with the role of functionalization and the different routes to achieve it. Finally, some example of sensing applications in various fields are presented.
{"title":"Concept, methodologies and tools for carbon for sensing devices","authors":"Mauro Giorcelli, P. Savi, A. Tagliaferro","doi":"10.1109/INEC.2018.8441917","DOIUrl":"https://doi.org/10.1109/INEC.2018.8441917","url":null,"abstract":"Carbon is playing an increasingly prominent role as a sensing material. The various steps that transform a raw material in a sensing device are briefly presented and discussed. The discussion then deals with the role of functionalization and the different routes to achieve it. Finally, some example of sensing applications in various fields are presented.","PeriodicalId":310101,"journal":{"name":"2018 IEEE 8th International Nanoelectronics Conferences (INEC)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125297950","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/INEC.2018.8441908
Jun-Sik Yoon, C. Baek
Tunneling field-effect transistor (TFET) is one of the promising candidates to substitute conventional MOSFET for ultra-low power applications. TFETs obey band-to-band tunneling, thus attaining sub-60-mV/dec of the subthreshold swing. However, there is a trade-off of small on-state currents even at high operation voltage. In this work, the SiGe core-shell nanowire TFETs are introduced by showing superior DC characteristics compared to other silicon-based TFETs.
{"title":"Vertical Nanowire Tunneling Field-Effect Transistors adopting Core-shell Structure with Strain Effects","authors":"Jun-Sik Yoon, C. Baek","doi":"10.1109/INEC.2018.8441908","DOIUrl":"https://doi.org/10.1109/INEC.2018.8441908","url":null,"abstract":"Tunneling field-effect transistor (TFET) is one of the promising candidates to substitute conventional MOSFET for ultra-low power applications. TFETs obey band-to-band tunneling, thus attaining sub-60-mV/dec of the subthreshold swing. However, there is a trade-off of small on-state currents even at high operation voltage. In this work, the SiGe core-shell nanowire TFETs are introduced by showing superior DC characteristics compared to other silicon-based TFETs.","PeriodicalId":310101,"journal":{"name":"2018 IEEE 8th International Nanoelectronics Conferences (INEC)","volume":"os-22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127691103","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/INEC.2018.8441931
First Q. Shen, Se-Jung Yang, Third J. B. Xie, Fourth S. Ren, Fifth W. Z. Yuan
This paper presents an enhanced high-sensitivity micro resonant temperature sensor with axial stain amplification structure. With the external temperature variation, an amplificated axial strain of micro-resonator vibration beam will be produced because of the materials with different thermal expansion coefficients of the micro resonator and package. This will result in a larger resonant frequency shift of the device with temperature change. The theory and analysis of frequency variation is illustrated with temperature sensitivity achieving 309Hz/K. Experimental test shows that actual frequency variation with temperature change of 20K is about 252Hz/K. Simulation match with measurement moderately and can be utilized to optimally design high-sensitivity temperature sensor before the costly fabrication.
{"title":"An Enhanced High-Sensitivity Micro Resonant Thermometer with Axial Strain Amplification Effect","authors":"First Q. Shen, Se-Jung Yang, Third J. B. Xie, Fourth S. Ren, Fifth W. Z. Yuan","doi":"10.1109/INEC.2018.8441931","DOIUrl":"https://doi.org/10.1109/INEC.2018.8441931","url":null,"abstract":"This paper presents an enhanced high-sensitivity micro resonant temperature sensor with axial stain amplification structure. With the external temperature variation, an amplificated axial strain of micro-resonator vibration beam will be produced because of the materials with different thermal expansion coefficients of the micro resonator and package. This will result in a larger resonant frequency shift of the device with temperature change. The theory and analysis of frequency variation is illustrated with temperature sensitivity achieving 309Hz/K. Experimental test shows that actual frequency variation with temperature change of 20K is about 252Hz/K. Simulation match with measurement moderately and can be utilized to optimally design high-sensitivity temperature sensor before the costly fabrication.","PeriodicalId":310101,"journal":{"name":"2018 IEEE 8th International Nanoelectronics Conferences (INEC)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133721770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/INEC.2018.8441918
B.Q. Wang, Y.X. Chen, L.H. Tang, K. Tao
In this work, we present the fabrication and characterization of a novel multi-layer noncontact disk-shaped electrostatic microgenerator. The microgenerator aims to harvest kinetic energy from rotary motion in our daily life. The multi-layer structure is composed of pairs of energy harvesting units. Each unit consists of two parts: the rotational blades with copper electrodes that are attached to the center shaft and the stationary disk that is fixed on the external barrier structure. Compared to the previous two-plate structure, the current device has two unique merits: First, both sides of the stationary disk are coated with electret material and are corona charged. It is beneficial to maximize the output power density of the whole device. Second, with the help of the micro rotary bearing, multilayer rotary structure has been successfully implemented for the first time. Therefore, the overall performance has been multiplied by several folds and high output power can be readily achieved.
{"title":"Multi-layer Noncontact Disk-shaped Electrostatic Microgenerator","authors":"B.Q. Wang, Y.X. Chen, L.H. Tang, K. Tao","doi":"10.1109/INEC.2018.8441918","DOIUrl":"https://doi.org/10.1109/INEC.2018.8441918","url":null,"abstract":"In this work, we present the fabrication and characterization of a novel multi-layer noncontact disk-shaped electrostatic microgenerator. The microgenerator aims to harvest kinetic energy from rotary motion in our daily life. The multi-layer structure is composed of pairs of energy harvesting units. Each unit consists of two parts: the rotational blades with copper electrodes that are attached to the center shaft and the stationary disk that is fixed on the external barrier structure. Compared to the previous two-plate structure, the current device has two unique merits: First, both sides of the stationary disk are coated with electret material and are corona charged. It is beneficial to maximize the output power density of the whole device. Second, with the help of the micro rotary bearing, multilayer rotary structure has been successfully implemented for the first time. Therefore, the overall performance has been multiplied by several folds and high output power can be readily achieved.","PeriodicalId":310101,"journal":{"name":"2018 IEEE 8th International Nanoelectronics Conferences (INEC)","volume":"357 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122804503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/INEC.2018.8441933
T. Pobkrut, S. Siyang, T. Thepudom, T. Kerdcharoen
Odor can affect human health both directly and indirectly specifically malodor. In this work, the portable electronic nose is developed for environmental experiment and it can clearly classify characteristic of each odor source in the factory. Using a zero-grade air as a reference gas and reforming mechanisms of sample testing electronic nose can improve accuracy and efficacy including reduce time of experiment for environmental application. Therefore, this electronic nose can be used for finding the source of malodor that disturb the surrounding villager. The environmental electronic nose can apply to be the internet of things (IoT) device for remotely monitor the odor around the factory and in the village in the future.
{"title":"Development of malodor monitoring system based on electronic nose technology","authors":"T. Pobkrut, S. Siyang, T. Thepudom, T. Kerdcharoen","doi":"10.1109/INEC.2018.8441933","DOIUrl":"https://doi.org/10.1109/INEC.2018.8441933","url":null,"abstract":"Odor can affect human health both directly and indirectly specifically malodor. In this work, the portable electronic nose is developed for environmental experiment and it can clearly classify characteristic of each odor source in the factory. Using a zero-grade air as a reference gas and reforming mechanisms of sample testing electronic nose can improve accuracy and efficacy including reduce time of experiment for environmental application. Therefore, this electronic nose can be used for finding the source of malodor that disturb the surrounding villager. The environmental electronic nose can apply to be the internet of things (IoT) device for remotely monitor the odor around the factory and in the village in the future.","PeriodicalId":310101,"journal":{"name":"2018 IEEE 8th International Nanoelectronics Conferences (INEC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129945767","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：