A Gain-Boosted 52–142 GHz Band-Pass Distributed Amplifier in O.13μm SiGe Process with fmax of 210GHz

H. Rashtian, O. Momeni
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引用次数: 2

Abstract

A band-pass gain-boosted distributed amplifier is proposed. The amplifier achieves a bandwidth of 90 GHz at center frequency of 97 GHz and operates up to frequencies as high as 0.67fmax of the transistors. A novel gain-boosted cascode structure as well as band-pass transmission lines are employed to significantly boost the bandwidth and the highest operation frequency of the amplifier. The amplifier shows an average gain of 14.4 dB from 52 GHz to 142 GHz in a 0.13-μm SiGe process with fmax of 210 GHz.
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0.13 μm SiGe工艺增益增强52-142 GHz带通分布式放大器,fmax为210GHz
提出了一种带通增益增强分布式放大器。该放大器在中心频率为97 GHz时实现了90 GHz的带宽,并且工作频率高达晶体管的0.67fmax。采用一种新型的增益增强级联码结构和带通传输线,大大提高了放大器的带宽和最高工作频率。该放大器在0.13 μm SiGe工艺下,在52 ~ 142 GHz范围内的平均增益为14.4 dB, fmax为210 GHz。
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