{"title":"Nanointervention into crystal flatland. III. Crystal growth and micromorphology of cleaved GaSe(001) surface","authors":"A. Kozhukhov, T. Gavrilova, K. Kokh, V. Atuchin","doi":"10.1109/EDM.2012.6310248","DOIUrl":null,"url":null,"abstract":"Optical quality GaSe crystals with diameter of 10 mm have been grown by modified Bridgman method using unusual oscillating temperature regime in the middle zone at the level of crystallization front. Cleaved surface (001) has been evaluated by SEM and AFM. Basic cleaved surface with area up to ~200 mm2 is flat with as low rms parameter as 0,3 nm. Such local defects as hillocks up to 35 nm and mesostructure are observed by SEM and AFM.","PeriodicalId":347076,"journal":{"name":"International Conference and Seminar of Young Specialists on Micro/Nanotechnologies and Electron Devices","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference and Seminar of Young Specialists on Micro/Nanotechnologies and Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDM.2012.6310248","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Optical quality GaSe crystals with diameter of 10 mm have been grown by modified Bridgman method using unusual oscillating temperature regime in the middle zone at the level of crystallization front. Cleaved surface (001) has been evaluated by SEM and AFM. Basic cleaved surface with area up to ~200 mm2 is flat with as low rms parameter as 0,3 nm. Such local defects as hillocks up to 35 nm and mesostructure are observed by SEM and AFM.
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