G. Shahidi, B. Davari, T. Bucelot, D. Zicherman, P. McFarland, A. Fink, S. Brodsky, K. Pettrilo, N. Mazzeo, R. Lombardi, M. Rodriguez, M. Polcari, T. Ning
{"title":"A high performance low temperature 0.3 mu m CMOS on SIMOX","authors":"G. Shahidi, B. Davari, T. Bucelot, D. Zicherman, P. McFarland, A. Fink, S. Brodsky, K. Pettrilo, N. Mazzeo, R. Lombardi, M. Rodriguez, M. Polcari, T. Ning","doi":"10.1109/VLSIT.1992.200671","DOIUrl":null,"url":null,"abstract":"It is shown that ultrathin SOI offers a device design advantage for operation of CMOS circuits at 77 K. The use of ultrathin SOI makes it possible to achieve low threshold at relatively high channel doping, which is necessary for reduction of short channel effects. Very-high-performance loaded NAND inverters (with delays of less than 100 ps at 2 V) were fabricated.<<ETX>>","PeriodicalId":404756,"journal":{"name":"1992 Symposium on VLSI Technology Digest of Technical Papers","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1992 Symposium on VLSI Technology Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.1992.200671","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
It is shown that ultrathin SOI offers a device design advantage for operation of CMOS circuits at 77 K. The use of ultrathin SOI makes it possible to achieve low threshold at relatively high channel doping, which is necessary for reduction of short channel effects. Very-high-performance loaded NAND inverters (with delays of less than 100 ps at 2 V) were fabricated.<>
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