A 2.1GHz 1.3V 5mW programmable Q-enhancement LC bandpass biquad in 0.35/spl mu/m CMOS

Fikret Duelgel, E. Sánchez-Sinencio, J. Silva-Martínez
{"title":"A 2.1GHz 1.3V 5mW programmable Q-enhancement LC bandpass biquad in 0.35/spl mu/m CMOS","authors":"Fikret Duelgel, E. Sánchez-Sinencio, J. Silva-Martínez","doi":"10.1109/CICC.2002.1012815","DOIUrl":null,"url":null,"abstract":"A 2.1GHz, 1.3V, 5mW, fully integrated Q enhancement LC bandpass biquad programmable in peak gain, Q and f/sub o/ is implemented in 0.35/spl mu/m standard CMOS. The Q tuning is through an adjustable negative conductance generator. Measured frequency tuning (through varactors) is 13% around 2.1GHz. The filter sinks 4mA from 1.3V providing a Q of 40 at 2.19GHz with 1dB compression DR of 38dB and SFDR of 33dB. The silicon area is 0.1mm/sup 2/.","PeriodicalId":209025,"journal":{"name":"Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICC.2002.1012815","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

Abstract

A 2.1GHz, 1.3V, 5mW, fully integrated Q enhancement LC bandpass biquad programmable in peak gain, Q and f/sub o/ is implemented in 0.35/spl mu/m standard CMOS. The Q tuning is through an adjustable negative conductance generator. Measured frequency tuning (through varactors) is 13% around 2.1GHz. The filter sinks 4mA from 1.3V providing a Q of 40 at 2.19GHz with 1dB compression DR of 38dB and SFDR of 33dB. The silicon area is 0.1mm/sup 2/.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
2.1GHz 1.3V 5mW可编程q增强LC带通双路电路,0.35/spl mu/m CMOS
一个2.1GHz, 1.3V, 5mW,全集成Q增强LC带通双可编程的峰值增益,Q和f/sub / 0 /在0.35/spl mu/m标准CMOS中实现。Q调谐是通过一个可调的负电导发生器。测量频率调谐(通过变容管)在2.1GHz左右为13%。该滤波器从1.3V吸收4mA,在2.19GHz时Q为40,1dB压缩DR为38dB, SFDR为33dB。硅面积为0.1mm/sup 2/。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
A signal integrity-driven buffer insertion technique for post-routing noise and delay optimization Modularized low temperature LNO/PZT/LNO ferroelectric capacitor-over-interconnect (COI) FeRAM for advanced SOC (ASOC) application SOI Hall effect sensor operating up to 270/spl deg/C A 402-output TFT-LCD driver IC with power-controlling function by selecting number of colors Understanding MOSFET mismatch for analog design
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1