Photosensing behaviors of S and N co-doped graphene quantum dot sensitized ZnO nanorod/conducting polymer hybrid devices

Abstract

ZnO nanorods have been grown on indium tin oxide (ITO) coated flexible polyethylene terephthalate (PET) substrates by a hydrothermal method. Hybrid photosensing devices have been fabricated with S and N co-doped graphene quantum dot (SN-GQD) sensitized ZnO nanorods and a conducting polymer poly (3-hexylthiophene) (P3HT). The photoresponse behaviors have been investigated for hybrid devices with and without GQD attachment. SN-GQD sensitized nanorod based device demonstrated superior photoresponse and higher incident photon to electron conversion efficiency (IPCE) than pristine ZnO nanorods.