{"title":"New Progress in a Development of a 94 GHz Pretuned Module Silicon Ikpati Diode","authors":"M. Heitzmann, M. Boudot","doi":"10.1109/EUMA.1983.333235","DOIUrl":null,"url":null,"abstract":"Use of low pressure epitaxy and mainly a batch process for integrated heat sink technology, associated with a very low inductive quartz encapsulation giving a radial impedance match, are described. Results for two types of these pretuned modules, one on copper the other on Diamond IIa, are given for CW oscillations reaching 800 mW with 10 % efficiency and junction temperature rise of 200°C.","PeriodicalId":105436,"journal":{"name":"1983 13th European Microwave Conference","volume":"60 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1983-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1983 13th European Microwave Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUMA.1983.333235","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Use of low pressure epitaxy and mainly a batch process for integrated heat sink technology, associated with a very low inductive quartz encapsulation giving a radial impedance match, are described. Results for two types of these pretuned modules, one on copper the other on Diamond IIa, are given for CW oscillations reaching 800 mW with 10 % efficiency and junction temperature rise of 200°C.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
