{"title":"FRACS (fully radiative current path structure)-A high speed bipolar transistor with sub-0.1 mu m emitter","authors":"T. Onai, K. Nakazato, Y. Kiyota, T. Nakamura","doi":"10.1109/VLSIT.1992.200643","DOIUrl":null,"url":null,"abstract":"It is shown that in the fully radiative current path structure (FRACS) transistor the maximum cutoff frequency (f/sub T/) is enhanced by the equivalent drift field induced in the base by the radiative diffusion current from a small emitter-base (E-B) junction to a large collector-base (C-B) junction. The f/sub T/ can be increased by reducing the emitter size as well as by reducing the base width. Theoretical analysis and experimental results show that the f/sub T/ is enhanced as the emitter becomes smaller. FRACS is thus a suitable structure for future sub-0.1- mu m emitter transistors.<<ETX>>","PeriodicalId":404756,"journal":{"name":"1992 Symposium on VLSI Technology Digest of Technical Papers","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1992 Symposium on VLSI Technology Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.1992.200643","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
It is shown that in the fully radiative current path structure (FRACS) transistor the maximum cutoff frequency (f/sub T/) is enhanced by the equivalent drift field induced in the base by the radiative diffusion current from a small emitter-base (E-B) junction to a large collector-base (C-B) junction. The f/sub T/ can be increased by reducing the emitter size as well as by reducing the base width. Theoretical analysis and experimental results show that the f/sub T/ is enhanced as the emitter becomes smaller. FRACS is thus a suitable structure for future sub-0.1- mu m emitter transistors.<>
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