The effects of plating current and rotation speed on the microstructural properties of electrochemical plated Cu films

Wei-Lin Wang, Shi-Jun Liu, M. Yeh, Hsien-Chang Kuo, Hung-Ju Chien, T. Ying
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Abstract

The microstructures of electrochemical plated (ECP) Cu films are investigated by various plating current and the rotation speed of wafer. Decreasing plating current increases the impurity concentration in an ECP Cu film. The impurity content is also raised by elevating the rotation speed of wafer. The grain size and texture behavior of an ECP Cu film is affected by the impurity concentration and distribution.
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电镀电流和转速对电化学镀铜膜微观组织性能的影响
通过不同的电镀电流和不同的晶圆转速,研究了电化学镀铜膜的微观结构。减小电镀电流会增加ECP铜膜中的杂质浓度。通过提高晶圆片的转速,杂质含量也有所提高。ECP铜膜的晶粒尺寸和织构行为受杂质浓度和分布的影响。
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