Hybrid dual-threshold design techniques for high-performance processors with low-power features

U. Ko, Andrew Pua, A. Hill, Pranjal Srivastava
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引用次数: 16

Abstract

This paper investigates delay, power and area of several critical library components for high-performance, low-power microprocessor designs. To improve performance of a 0.18-/spl mu/m technology at a supply voltage of 1.8 V, the proposed hybrid dual-V/sub t/ (HDVT) circuit architectures enhance speed of low-V/sub t/ by 21% while reducing leakage power dissipation of low-V/sub t/ by an order of magnitude for combinatorial logic. For sequential elements, a HDVT split-slave dual-path (HSSDP) and Push-Pull Isolation (HPPI) registers are proposed to improve 29-92% performance over an HDVT-conventional registers with 20-89% less energy consumption. For the datapath, a HDVT hierarchical, reduced-swing, dual-V/sub t/ logic (HHRSL) comparator is proposed to improve the delay of prior arts by up to 50%.
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低功耗高性能处理器的混合双阈值设计技术
本文研究了用于高性能、低功耗微处理器设计的几个关键库元件的延迟、功耗和面积。为了提高电源电压为1.8 V时0.18-/spl mu/m技术的性能,所提出的混合双V/sub / (HDVT)电路架构将低V/sub /的速度提高了21%,同时将低V/sub /的泄漏功耗降低了一个数量级。对于顺序元件,提出了HDVT分离-从机双路径(HSSDP)和推挽隔离(HPPI)寄存器,与HDVT传统寄存器相比,性能提高29-92%,能耗降低20-89%。对于数据路径,提出了一种HDVT分层、减摆、双v /sub /逻辑(HHRSL)比较器,可将现有技术的延迟提高高达50%。
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