Ferroelectric polymer films for flexible memory devices

Abstract

Here we demonstrate application of organic ferroelectric insulating material: copolymer vinylidene fluoride and trifluoroethylene P(VDF-TrFE) for organic memory devices. The metal-insulator-metal structures have been used to study the ferroelectric properties and represent the model applications for ferroelectric field-effect transistors (FeFETs) and ferroelectric random access memories (FRAM). The current-voltage and capacitance-voltage characteristics depicted ferroelectric switching phenomenon present in thin-film structures and polarization properties have been analysed. This work describes the MIM device fabrication technology as well as the evaluation of material properties: saturated polarization, maximum electric field intensity, critical electric field, and relative dielectric constant.