Fabrication of 3D surface structures using grayscale lithography

C. Stilson, R. Pal, R. Coutu
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引用次数: 6

Abstract

The ability to design and develop 3D microstructures is important for microelectromechanical systems (MEMS) fabrication. Previous techniques used to create 3D devices included tedious steps in direct writing and aligning patterns onto a substrate followed by multiple photolithography steps using expensive, customized equipment. Additionally, these techniques restricted batch processing and placed limits on achievable shapes. Gray-scale lithography enables the fabrication of a variety of shapes using a single photolithography step followed by reactive ion etching (RIE). Micromachining 3D silicon structures for MEMS can be accomplished using gray-scale lithography along with dry anisotropic etching. In this study, we investigated: using MATLAB for mask designs; feasibility of using 1 μm Heidelberg mask maker to direct write patterns onto photoresist; using RIE processing to etch patterns into a silicon substrate; and the ability to tailor etch selectivity for precise fabrication. To determine etch rates and to obtain desired etch selectivity, parameters such as gas mixture, gas flow, and electrode power were studied. This process successfully demonstrates the ability to use gray-scale lithography and RIE for use in the study of micro-contacts. These results were used to produce a known engineered non-planer surface for testing micro-contacts. Surface structures are between 5 μm and 20 μm wide with varying depths and slopes based on mask design and etch rate selectivity. The engineered surfaces will provide more insight into contact geometries and failure modes of fixed-fixed micro-contacts.
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利用灰度光刻技术制造三维表面结构
设计和开发三维微结构的能力对于微机电系统(MEMS)的制造非常重要。以前用于创建3D设备的技术包括直接写入和将图案对齐到基板上的繁琐步骤,然后使用昂贵的定制设备进行多个光刻步骤。此外,这些技术限制了批量处理,并限制了可实现的形状。灰度光刻技术可以在反应离子蚀刻(RIE)之后使用单个光刻步骤制造各种形状。采用灰度光刻和干各向异性蚀刻技术可以实现MEMS三维硅结构的微加工。在本研究中,我们研究了:利用MATLAB进行掩模设计;使用1 μm Heidelberg掩模机将图案直接写入光刻胶的可行性;使用RIE工艺将图案蚀刻到硅衬底上;以及为精确制造量身定制蚀刻选择性的能力。为了确定蚀刻速率并获得所需的蚀刻选择性,研究了气体混合物、气体流量和电极功率等参数。这个过程成功地证明了在微接触研究中使用灰度光刻和RIE的能力。这些结果被用来生产一个已知的工程非刨床表面,用于测试微接触。基于掩膜设计和蚀刻速率选择性,表面结构宽度在5 ~ 20 μm之间,具有不同的深度和斜率。工程表面将提供更多的接触几何形状和固定-固定微接触的失效模式的见解。
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