{"title":"Methods of increasing the input power level in multi-element film microwave attenuators","authors":"Alexsandr S. Mitkov, V. Razinkin, V. Khrustalev","doi":"10.17212/1727-2769-2021-3-32-43","DOIUrl":null,"url":null,"abstract":"The paper describes the design principles of multi-element broadband microwave attenuators of a high power level on film resistors. The proposed approaches make it possible to increase the input power level by several times or, at a constant input power, to significantly expand the ope¬rating frequency band. The studied attenuators with an insertion loss of 1-10 dB provide high-quality matching in the 0-2 GHz frequency band at an input power level of up to 500 W. These parameters are obtained by introducing quarter-wave sections of transmission lines with a certain wave imped-ance into the longitudinal and transverse branches of matched U-shaped and T-shaped dissipative structures.","PeriodicalId":448354,"journal":{"name":"Proceedings of the Russian higher school Academy of sciences","volume":"86 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the Russian higher school Academy of sciences","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.17212/1727-2769-2021-3-32-43","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
The paper describes the design principles of multi-element broadband microwave attenuators of a high power level on film resistors. The proposed approaches make it possible to increase the input power level by several times or, at a constant input power, to significantly expand the ope¬rating frequency band. The studied attenuators with an insertion loss of 1-10 dB provide high-quality matching in the 0-2 GHz frequency band at an input power level of up to 500 W. These parameters are obtained by introducing quarter-wave sections of transmission lines with a certain wave imped-ance into the longitudinal and transverse branches of matched U-shaped and T-shaped dissipative structures.
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