Potential barrier of mica-metal contact

T. Sakakibara, N. Aeba, M. Endo
{"title":"Potential barrier of mica-metal contact","authors":"T. Sakakibara, N. Aeba, M. Endo","doi":"10.1109/ICSD.1989.69156","DOIUrl":null,"url":null,"abstract":"To study the relationship between the composition of the dielectric surface and the potential barrier, photocurrent spectra were measured for cleared mica (muscovite) which could be expected theoretically not to have any free chemical bonds at its surface. Barrier heights and densities of surface states were examined for specimens whose surfaces were irradiated by a neutral Ar beam to remove contamination and adsorbed gas or to modify their composition. It was found that the barrier height of a mica-metal contact was not altered by a short period of irradiation with the Ar beam or by exposure to the air after irradiation. A long period of irradiation (40 min) resulted in damage to the mica surface, and the density of surface states increased up to about 3 times (1.2*10/sup 14/ states cm/sup -2/ eV/sup -1/) that of the untreated specimen. It was found by ESCA (electron spectroscopy for chemical analysis) that potassium and sodium atoms were sputtered by the long period of irradiation, causing imperfections or disordering in the surface structure of the mica. The surface states created by the irradiation are believed to be dependent on the free bonds that formed as a result of the above imperfections.<<ETX>>","PeriodicalId":184126,"journal":{"name":"Proceedings of the 3rd International Conference on Conduction and Breakdown in Solid Dielectrics","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 3rd International Conference on Conduction and Breakdown in Solid Dielectrics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSD.1989.69156","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

Abstract

To study the relationship between the composition of the dielectric surface and the potential barrier, photocurrent spectra were measured for cleared mica (muscovite) which could be expected theoretically not to have any free chemical bonds at its surface. Barrier heights and densities of surface states were examined for specimens whose surfaces were irradiated by a neutral Ar beam to remove contamination and adsorbed gas or to modify their composition. It was found that the barrier height of a mica-metal contact was not altered by a short period of irradiation with the Ar beam or by exposure to the air after irradiation. A long period of irradiation (40 min) resulted in damage to the mica surface, and the density of surface states increased up to about 3 times (1.2*10/sup 14/ states cm/sup -2/ eV/sup -1/) that of the untreated specimen. It was found by ESCA (electron spectroscopy for chemical analysis) that potassium and sodium atoms were sputtered by the long period of irradiation, causing imperfections or disordering in the surface structure of the mica. The surface states created by the irradiation are believed to be dependent on the free bonds that formed as a result of the above imperfections.<>
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
云母-金属接触的势垒
为了研究电介质表面组成与势垒之间的关系,对理论上可以认为表面没有自由化学键的清洁云母(白云母)进行了光电流谱测量。用中性氩束照射表面以去除污染和吸附气体或改变其成分的样品,对其表面态的势垒高度和密度进行了检测。研究发现,短时间辐照或辐照后暴露于空气中均不会改变云母-金属接触点的障壁高度。长时间照射(40 min)导致云母表面损伤,表面态密度增加约3倍(1.2*10/sup 14/态cm/sup -2/ eV/sup -1/)。通过ESCA(电子能谱法化学分析)发现,长时间的辐照使钾和钠原子溅射,造成云母表面结构的缺陷或无序。辐照产生的表面状态被认为取决于由上述缺陷形成的自由键。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
On the mechanism of partial discharges in gaseous cavities in contact with solid or liquid insulators The initiation and growth of AC tree in polyethylene Effects of the field dependent occupation of electrical-stress-generated traps on the conduction and breakdown of thin SiO/sub 2/ films A model of the electrical breakdown process due to electrical treeing growth Dielectric breakdown and partial discharge in BaTiO/sub 3/ ceramics
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1