Unique measurement to monitor the gate oxide lifetime indicator, case studies

Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548) Pub Date : 2001-07-09 DOI:10.1109/IPFA.2001.941476

X. Gagnard, O. Bonnaud

引用次数: 1

Abstract

Previous works (Gagnard and Bonnaud, Microelectron. Reliability vol. 39, pp. 75-763, 1999, and Proc. SPIE vol. 4182, pp. 142-50, 2000) demonstrated the possibility of realization of the gate oxide lifetime by a unique measurement based on leakage current. This indicator, easy to implement and able to decrease the test time, can be included in the routine of parametric tests. This work confirms the validity of this indicator and presents case studies related to BCD technology.

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独特的测量监测栅极氧化物寿命指标，案例研究

以前的作品(Gagnard和Bonnaud，微电子。可靠性vol. 39, pp. 75-763, 1999，和Proc. SPIE vol. 4182, pp. 142- 50,2000)证明了通过基于泄漏电流的独特测量实现栅极氧化物寿命的可能性。该指标易于实现，可缩短试验时间，可纳入参数试验的常规中。这项工作证实了这一指标的有效性，并提出了与BCD技术相关的案例研究。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548)

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