{"title":"Transport properties of CVD-grown graphene nanoribbon field-effect transistors","authors":"A. Lyons, A. Behnam, E. Chow, E. Pop","doi":"10.1109/DRC.2011.5994450","DOIUrl":null,"url":null,"abstract":"Graphene nanoribbons (GNRs) are promising candidates for nanoelectronics as interconnects or field-effect transistors (FETs) [1,2]. Previous GNR studies used chemically derived [1] or mechanically exfoliated [2] graphene, which are not practical for large scale fabrication. In this work we present a comprehensive analysis of GNR FETs obtained by chemical vapor deposition (CVD) [3], which is promising for creating wafer-scale circuits. We demonstrate low-bias, high-bias, and temperature-dependent measurements. We find that CVD GNRs have properties comparable to the best state-of-the-art GNRs obtained by other methods, suggesting that grain boundaries play a negligible role in sub-100 nm devices. This approach also serves to identify future challenges and represents a first step towards large-scale integration.","PeriodicalId":107059,"journal":{"name":"69th Device Research Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"69th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2011.5994450","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Graphene nanoribbons (GNRs) are promising candidates for nanoelectronics as interconnects or field-effect transistors (FETs) [1,2]. Previous GNR studies used chemically derived [1] or mechanically exfoliated [2] graphene, which are not practical for large scale fabrication. In this work we present a comprehensive analysis of GNR FETs obtained by chemical vapor deposition (CVD) [3], which is promising for creating wafer-scale circuits. We demonstrate low-bias, high-bias, and temperature-dependent measurements. We find that CVD GNRs have properties comparable to the best state-of-the-art GNRs obtained by other methods, suggesting that grain boundaries play a negligible role in sub-100 nm devices. This approach also serves to identify future challenges and represents a first step towards large-scale integration.