W. Koelmans, T. Bachmann, F. Zipoli, A. Ott, C. Dou, A. Ferrari, O. Cojocaru-Mirédin, S. Zhang, C. Scheu, M. Wuttig, V. K. Nagareddy, M. Craciun, A. Alexeev, C. Wright, V. Jonnalagadda, A. Curioni, A. Sebastian, E. Eleftheriou
{"title":"Carbon-Based Resistive Memories","authors":"W. Koelmans, T. Bachmann, F. Zipoli, A. Ott, C. Dou, A. Ferrari, O. Cojocaru-Mirédin, S. Zhang, C. Scheu, M. Wuttig, V. K. Nagareddy, M. Craciun, A. Alexeev, C. Wright, V. Jonnalagadda, A. Curioni, A. Sebastian, E. Eleftheriou","doi":"10.1109/IMW.2016.7493569","DOIUrl":null,"url":null,"abstract":"Carbon-based nonvolatile resistive memories are an emerging technology. Switching endurance remains a challenge in carbon memories based on tetrahedral amorphous carbon (ta-C). One way to counter this is by oxygenation to increase the repeatability of reversible switching. Here, we overview the current status of carbon memories. We then present a comparative study of oxygen-free and oxygenated carbon-based memory devices, combining experiments and molecular dynamics (MD) simulations.","PeriodicalId":365759,"journal":{"name":"2016 IEEE 8th International Memory Workshop (IMW)","volume":"74 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 8th International Memory Workshop (IMW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMW.2016.7493569","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 11
Abstract
Carbon-based nonvolatile resistive memories are an emerging technology. Switching endurance remains a challenge in carbon memories based on tetrahedral amorphous carbon (ta-C). One way to counter this is by oxygenation to increase the repeatability of reversible switching. Here, we overview the current status of carbon memories. We then present a comparative study of oxygen-free and oxygenated carbon-based memory devices, combining experiments and molecular dynamics (MD) simulations.
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