S. Hiza, Y. Shirayanagi, Y. Takiguchi, K. Nishimura, T. Matsumae, Y. Kurashima, E. Higurashi, H. Takagi, A. Chayahara, Y. Mokuno, H. Yamada, K. Kasamura, H. Toyoda, A. Kubota, M. Yamamuka
{"title":"GaN-HEMTs on Diamond Prepared by Room-Temperature Bonding Technology","authors":"S. Hiza, Y. Shirayanagi, Y. Takiguchi, K. Nishimura, T. Matsumae, Y. Kurashima, E. Higurashi, H. Takagi, A. Chayahara, Y. Mokuno, H. Yamada, K. Kasamura, H. Toyoda, A. Kubota, M. Yamamuka","doi":"10.1109/LTB-3D53950.2021.9598420","DOIUrl":null,"url":null,"abstract":"GaN-on-Diamond high electron mobility transistors were successfully fabricated by surface-activated room-temperature bonding technique. Various diamond substrates were finely polished and bonded to GaN-HEMTs by surface-activated room-temperature bonding. Fabricated devices showed superior characteristics in thermal dissipation compared to the device with conventional structure.","PeriodicalId":198318,"journal":{"name":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LTB-3D53950.2021.9598420","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
GaN-on-Diamond high electron mobility transistors were successfully fabricated by surface-activated room-temperature bonding technique. Various diamond substrates were finely polished and bonded to GaN-HEMTs by surface-activated room-temperature bonding. Fabricated devices showed superior characteristics in thermal dissipation compared to the device with conventional structure.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
