Tunnel field-effect transistors - status and prospects

Abstract

This paper reviews recent progress in the development of tunnel field-effect transistors (TFETs) [1–5] toward achieving channel currents comparable to high performance MOSFETs at supply voltages less than 0.5 V and subthreshold swing less than 60 mV/decade, for logic applications. To enable high performance in TFETs, development of narrow bandgap III–V and graphene nanoribbon (GNR) channels is indicated. Beyond the switch, the tunnel junction could provide enhanced functionality and new ways to integrate logic and memory [6].