{"title":"Effect of tensile capping layer on 3-D stress profiles in FinFET channels","authors":"K. Shin, T. Lauderdale, T. King","doi":"10.1109/DRC.2005.1553120","DOIUrl":null,"url":null,"abstract":"Strained-silicon technologies have been widely investigated to enhance the performance of CMOS devices (Thompson, et. al., 2005). In particular, strain induced by the use of a stressed SiNx capping layer is advantageous because of its process simplicity and its extendibility from bulk-Si to silicon-on-insulator (SOI) MOSFETs (Komoda, 2004, Pidin, 2004). In this paper, the effect of a tensile capping layer on the stress profile in the channel of a FinFET is studied for different channel-surface crystalline orientations and different fin aspect ratios, using the Ansys5.7 simulator","PeriodicalId":306160,"journal":{"name":"63rd Device Research Conference Digest, 2005. DRC '05.","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2005-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"63rd Device Research Conference Digest, 2005. DRC '05.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2005.1553120","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
Strained-silicon technologies have been widely investigated to enhance the performance of CMOS devices (Thompson, et. al., 2005). In particular, strain induced by the use of a stressed SiNx capping layer is advantageous because of its process simplicity and its extendibility from bulk-Si to silicon-on-insulator (SOI) MOSFETs (Komoda, 2004, Pidin, 2004). In this paper, the effect of a tensile capping layer on the stress profile in the channel of a FinFET is studied for different channel-surface crystalline orientations and different fin aspect ratios, using the Ansys5.7 simulator
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