The effect of softbaking temperature on SU-8 photoresist performance

S. Johari, Nithiyah Tamilchelvan, M. Nor, M. M. Ramli, B. N. Taib, M. Mazalan, Y. Wahab
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引用次数: 6

Abstract

One of the steps required during the fabrication of SU-8 mold for soft lithography is softbaking, which is conducted after the deposition of the photoresist. The purpose of softbaking is to stabilize the resist film and eliminate any remaining solvent through evaporation. This ensures that the resist surface is non-sticking, hence avoiding debris when transferring the patterns later. In this paper, we investigate the effects of softbaking temperature on the polymerization of SU-8 photoresist. The significance of this work is to optimize the fabrication process involved in producing SU-8 mold structures with thickness of 30 μm. This project involves a series of experiments covering softbaking temperatures ranging from 45° to 115° C. Experiments results show that softbaking temperature of 85°C results in completely stick and crack free structures. By this, a huge improvement obtained if compared to the result of processing at the standard soft bake temperature of 95°C. The soft bake temperature should not be taken lightly while optimizing SU-8 processing because it has a big influence on the material properties and the lithographic performance of the resist.
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软焙温度对SU-8光刻胶性能的影响
在SU-8软光刻模具的制造过程中,其中一个步骤是软烘烤,这是在光刻胶沉积后进行的。软焙的目的是稳定抗蚀膜,并通过蒸发消除任何残留的溶剂。这确保了抗蚀剂表面不粘,从而避免了稍后转移图案时的碎片。本文研究了软焙温度对SU-8光刻胶聚合的影响。本工作的意义在于优化SU-8厚度为30 μm的模具结构的制造工艺。本项目涉及一系列实验,软焙温度范围为45°~ 115°C,实验结果表明,软焙温度为85°C,结构完全无粘裂。通过这种方法,与在95°C的标准软烘焙温度下加工的结果相比,获得了巨大的改进。在优化SU-8工艺时,不能掉以轻心,因为软烘烤温度对材料性能和抗蚀剂的光刻性能影响很大。
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