Avalanche breakdown of pn-junctions — Simulation by spherical harmonics expansion of the Boltzmann transport equation

D. Jabs, C. Jungemann
{"title":"Avalanche breakdown of pn-junctions — Simulation by spherical harmonics expansion of the Boltzmann transport equation","authors":"D. Jabs, C. Jungemann","doi":"10.1109/SISPAD.2014.6931591","DOIUrl":null,"url":null,"abstract":"The deterministic solution of the coupled Boltzmann transport equations for electrons and holes is calculated by means of the spherical harmonics expansion method for avalanche breakdown of a pn-junction. An iteration scheme based on a splitting of the system matrix is presented, by which a stable solution of this numerically challenging problem can be obtained.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2014.6931591","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

The deterministic solution of the coupled Boltzmann transport equations for electrons and holes is calculated by means of the spherical harmonics expansion method for avalanche breakdown of a pn-junction. An iteration scheme based on a splitting of the system matrix is presented, by which a stable solution of this numerically challenging problem can be obtained.
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pn结的雪崩击穿-玻尔兹曼输运方程的球谐展开模拟
利用球谐展开法计算了电子与空穴耦合玻尔兹曼输运方程的确定性解。提出了一种基于系统矩阵分裂的迭代方案,从而得到了这一数值难题的稳定解。
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