{"title":"DC sputter epitaxy of p+-emitters for fabrication of crystalline-Si solar cells","authors":"W. Yeh, H. Moriyama","doi":"10.1109/ISNE.2016.7543327","DOIUrl":null,"url":null,"abstract":"Single crystal Si bulk solar cells were fabricated by growing p+-Si film on n-type Si(100) substrate as a emitter layer by sputter epitaxy at 315°C for the first time. Internal quantum efficiency (IQE) at visible light wavelength was higher than 95%, resulting in a short circuit current of as high as 21 mA/cm2 even without surface texturing and anti-reflection films.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISNE.2016.7543327","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Single crystal Si bulk solar cells were fabricated by growing p+-Si film on n-type Si(100) substrate as a emitter layer by sputter epitaxy at 315°C for the first time. Internal quantum efficiency (IQE) at visible light wavelength was higher than 95%, resulting in a short circuit current of as high as 21 mA/cm2 even without surface texturing and anti-reflection films.
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