Asymmetric Self-Cascode versus Graded-Channel SOI nMOSFETs for analog applications

R. Assalti, M. Pavanello, D. Flandre, M. de Souza
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引用次数: 4

Abstract

This paper compares the performance of Asymmetric Self-Cascode and Graded-Channel SOI nMOSFETs, both proposed to improve the analog performance of fully depleted SOI nMOSFETs. The differences at device level are evaluated and the impact of their application in basic analog circuits, i.e. common-source amplifier, source-follower and common-source current mirror are explored through experimental results.
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模拟应用的非对称自级联码与渐变通道SOI nmosfet
本文比较了非对称自级联码和梯度通道SOI nmosfet的性能,两者都是为了提高完全耗尽SOI nmosfet的模拟性能而提出的。评估了器件级的差异,并通过实验结果探讨了它们在基本模拟电路中应用的影响,即共源放大器、源跟随器和共源电流镜。
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