E. Stern, Guosheng Cheng, E. Cimpoiasu, Robert F. Klie, J. F. Klemic, D. Kretzschmar, J. Hyland, A. Sanders, R. Munden, Mark A. Reed
{"title":"Electrical characterization of individual GaN nanowires","authors":"E. Stern, Guosheng Cheng, E. Cimpoiasu, Robert F. Klie, J. F. Klemic, D. Kretzschmar, J. Hyland, A. Sanders, R. Munden, Mark A. Reed","doi":"10.1109/DRC.2005.1553138","DOIUrl":null,"url":null,"abstract":"The authors performed a thorough electrical characterization of hot-wall-CVD fabricated GaN nanowires (NWs) by studying over 500 single NW devices, and have extracted the growth parameters responsible for wire quality. Wires were grown by the vapor-liquid-solid mechanism","PeriodicalId":306160,"journal":{"name":"63rd Device Research Conference Digest, 2005. DRC '05.","volume":"55 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"63rd Device Research Conference Digest, 2005. DRC '05.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2005.1553138","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The authors performed a thorough electrical characterization of hot-wall-CVD fabricated GaN nanowires (NWs) by studying over 500 single NW devices, and have extracted the growth parameters responsible for wire quality. Wires were grown by the vapor-liquid-solid mechanism
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