{"title":"AC NEGF Simulation of Nanosheet MOSFETs","authors":"Sung-Min Hong, Phil-Hun Ahn","doi":"10.23919/SISPAD49475.2020.9241656","DOIUrl":null,"url":null,"abstract":"In this work, an AC nonequilibrium Green function (NEGF) simulation for nanosheet MOSFETs is presented. The AC NEGF equations are discretized using a decoupled mode-space approach for efficient implementation. The Poisson equation is solved self consistently to obtain the electrostatic potential. Our in-house device simulator, G-Device, is used to simulate the AC responses on nanosheet MOSFETs.","PeriodicalId":206964,"journal":{"name":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/SISPAD49475.2020.9241656","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
In this work, an AC nonequilibrium Green function (NEGF) simulation for nanosheet MOSFETs is presented. The AC NEGF equations are discretized using a decoupled mode-space approach for efficient implementation. The Poisson equation is solved self consistently to obtain the electrostatic potential. Our in-house device simulator, G-Device, is used to simulate the AC responses on nanosheet MOSFETs.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
