High-speed directly modulated laser for applications beyond 100GbE

W. Kobayashi, T. Fujisawa, Toshio Ito, T. Yamanaka, Y. Shibata, T. Tadokoro, H. Sanjoh
{"title":"High-speed directly modulated laser for applications beyond 100GbE","authors":"W. Kobayashi, T. Fujisawa, Toshio Ito, T. Yamanaka, Y. Shibata, T. Tadokoro, H. Sanjoh","doi":"10.1109/ICIPRM.2013.6562613","DOIUrl":null,"url":null,"abstract":"Recent results are reported for a 1.3-μm InGaAlAs directly modulated laser (DML) with a ridge waveguide structure. We realized a 3-dB-down electrical-to-optical (E/O) response of 34 GHz for a 150-μm DML. Clear eye openings were obtained at 43 Gb/s up to 60°C and at 50 Gb/s at 25°C.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2013.6562613","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

Recent results are reported for a 1.3-μm InGaAlAs directly modulated laser (DML) with a ridge waveguide structure. We realized a 3-dB-down electrical-to-optical (E/O) response of 34 GHz for a 150-μm DML. Clear eye openings were obtained at 43 Gb/s up to 60°C and at 50 Gb/s at 25°C.
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用于100GbE以上应用的高速直接调制激光器
报道了具有脊波导结构的1.3 μm InGaAlAs直接调制激光器(DML)的最新研究结果。我们在150 μm DML上实现了34 GHz的3db -down电光(E/O)响应。在60°C和25°C下,分别以43 Gb/s和50 Gb/s的速度获得清晰的眼开口。
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