Physically-based effective width modeling of MOSFETs and diffused resistors

Abstract

This paper presents effective DC electrical width models for MOSFETs and diffused resistors. The models account for the geometric width dependence on the LOCOS effect and the dog-bone (or webbing) effect, for devices defined by field oxide, and on the finite dopant source effect, for lowly doped resistors. The models are physically-based, C/sub /spl infin//-continuous functions of geometry, and significantly improve modeling of MOSFETs and resistors over geometry.