B. Bayraktaroglu, G. Dix, S. Mohammadi, D. Pavlidis
{"title":"AlGaAs/GaAs HBT reliability: dependence on material and correlation to baseband noise","authors":"B. Bayraktaroglu, G. Dix, S. Mohammadi, D. Pavlidis","doi":"10.1109/GAAS.1997.628259","DOIUrl":null,"url":null,"abstract":"The long-term reliability of an AlGaAs/GaAs HBT was found to have a strong dependence on the starting epitaxial material. The measured and extrapolated lifetimes ranged from 10/sup 2/ to 10/sup 9/ hours with devices fabricated on wafers obtained from 3 different vendors. The low frequency baseband noise characteristics were used to identify the source and the nature of mechanisms that lead to current gain degradation.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1997.628259","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
The long-term reliability of an AlGaAs/GaAs HBT was found to have a strong dependence on the starting epitaxial material. The measured and extrapolated lifetimes ranged from 10/sup 2/ to 10/sup 9/ hours with devices fabricated on wafers obtained from 3 different vendors. The low frequency baseband noise characteristics were used to identify the source and the nature of mechanisms that lead to current gain degradation.
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