C. C. Yeo, M. Lee, C. Liu, K.J. Choi, T. Lee, B. Cho
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引用次数: 0
Abstract
Metal gate/High-K stack CMOSFETs on ultra thin Ge epi channel on relaxed Si, capped with ultra thin Si (Si/Ge/Si substrate) were evaluated. NMOSFET shows enhanced mobility at low field while pMOSFET shows degraded peak mobility, with enhancement observed only at high field.
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