M. Koyanagi, Y. Yamada, M. Park, T. Fukushima, T. Tanaka
{"title":"Research and development of transistor structure in nano-scale region","authors":"M. Koyanagi, Y. Yamada, M. Park, T. Fukushima, T. Tanaka","doi":"10.1109/IWNC.2006.4570974","DOIUrl":null,"url":null,"abstract":"In this work, new silicon-on-low-k substrate (SOLK) MOSFET and germanium-on-low-k substrate (GOLK) MISFET are proposed. SOLK-MOSFET with metal back-gate was successfully fabricated using wafer bonding method with low-k material as an adhesive. It was shown that the threshold voltage, the on-current, and the off-current are more effectively controlled by the back-gate bias voltage in SOLK-MOSFETs with metal back-gate than in SOI-MOSFETs with buried back-gate. Ge MISFETs were fabricated with HfO2 gate dielectric and W/W2N metal gate which are formed on GOI wafer obtained by a new graded Ge condensation method. Excellent drain current-voltage characteristics and subthreshold characteristics in are obtained in the fabricated GOI-MISFETs.","PeriodicalId":356139,"journal":{"name":"2006 International Workshop on Nano CMOS","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 International Workshop on Nano CMOS","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWNC.2006.4570974","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this work, new silicon-on-low-k substrate (SOLK) MOSFET and germanium-on-low-k substrate (GOLK) MISFET are proposed. SOLK-MOSFET with metal back-gate was successfully fabricated using wafer bonding method with low-k material as an adhesive. It was shown that the threshold voltage, the on-current, and the off-current are more effectively controlled by the back-gate bias voltage in SOLK-MOSFETs with metal back-gate than in SOI-MOSFETs with buried back-gate. Ge MISFETs were fabricated with HfO2 gate dielectric and W/W2N metal gate which are formed on GOI wafer obtained by a new graded Ge condensation method. Excellent drain current-voltage characteristics and subthreshold characteristics in are obtained in the fabricated GOI-MISFETs.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
