Comparative Study of Unmodified WO3-ZnO and Au-Modified WO3-ZnO Based Thin Film Sensor Fabrication for Enhanced CH4 Gas Sensing Performance

Anup Dey, Bikram Biswas, S. Sarkar
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Abstract

WO3-ZnO and gold modified WO3-ZnO based thin film sensors were successfully fabricated and prepared by sol-gel process at room temperature. The prepared and deposited film was characterized by field emission scanning electron microscopy(FESEM), X-ray diffraction (XRD)and TEM (transmission electron microscopy). The gas sensing properties of Au modified WO3-ZnO thin film showed that deposited metal oxides have greatly influenced on enhanced response towards CH4 gases. The response magnitude was determined by various methane gas concentration and different operating temperature ranges of 50°C-350°C. It was establish that at the operating temperature of 150°C, gold- modified WO3-ZnO thin film sensor has the highest response (65%)as compared to WO3-ZnO samples.
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未经修饰的WO3-ZnO与au修饰的WO3-ZnO薄膜传感器对CH4气敏性能增强的比较研究
采用溶胶-凝胶法制备了WO3-ZnO和金改性WO3-ZnO薄膜传感器。采用场发射扫描电镜(FESEM)、x射线衍射仪(XRD)和透射电镜(TEM)对制备和沉积的薄膜进行了表征。Au修饰的WO3-ZnO薄膜的气敏性能表明,沉积的金属氧化物对其对CH4气体的增强响应有很大影响。响应幅度由不同的甲烷气体浓度和不同的工作温度范围(50℃-350℃)确定。结果表明,在工作温度为150℃时,金修饰的WO3-ZnO薄膜传感器的响应率最高(65%)。
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