C. B. Adamo, A. Flacker, Hercílio M. Cavalcanti, R. C. Teixeira, A. Rotondaro, L. Manera
{"title":"Development of MCM-D technology with photosensitive benzocyclobutene","authors":"C. B. Adamo, A. Flacker, Hercílio M. Cavalcanti, R. C. Teixeira, A. Rotondaro, L. Manera","doi":"10.1109/SBMICRO.2015.7298129","DOIUrl":null,"url":null,"abstract":"This paper evaluates the development of Multi-Chip Module Deposited (MCM-D) technology using photosensitive benzocyclobutene (BCB) to produce passive devices. The polymer was used as the dielectric and Ni-P/Au was used as the conductor film. The resistors' sheet resistance was measured with both TLM and direct measurement while the measurements of the capacitors and inductors required the usage of a Vector Network Analyzer (VNA) and treatment of the obtained s-parameters matrix in order to extract the values of both the capacitances and inductances.","PeriodicalId":342493,"journal":{"name":"2015 30th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 30th Symposium on Microelectronics Technology and Devices (SBMicro)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SBMICRO.2015.7298129","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
This paper evaluates the development of Multi-Chip Module Deposited (MCM-D) technology using photosensitive benzocyclobutene (BCB) to produce passive devices. The polymer was used as the dielectric and Ni-P/Au was used as the conductor film. The resistors' sheet resistance was measured with both TLM and direct measurement while the measurements of the capacitors and inductors required the usage of a Vector Network Analyzer (VNA) and treatment of the obtained s-parameters matrix in order to extract the values of both the capacitances and inductances.